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Parts
- P1 · [中文] 01 固体物理基础:能带、电子与空穴
- P2 · [英文] 01 Basic Solid-State Physics: Energy bands, Electrons and Holes|完整英文原声在后半部
- P3 · [必看] 1分钟:双语怎么切-充电解锁课程站
- P4 · [中文] 02 固体物理基础:掺杂、载流子浓度与分布
- P5 · [中文] 03 半导体载流子运动:漂移与扩散
- P6 · [中文] 04 PN结:耗尽区与二极管方程
- P7 · [中文] 05 PN结:结电容与掺杂分布
- P8 · [中文] 06 双极型晶体管:基本工作原理与电流特性
- P9 · [中文] 07 双极型晶体管:厄利效应、Ebers-Moll模型与大信号模型
- P10 · [中文] 08 MOS电容:能带图、积累、耗尽、反型与阈值电压
- P11 · [中文] 09 MOSFET入门:阈值电压、体效应与线性区IV特性
- P12 · [中文] 10 MOSFET IV特性推导、工作区与沟道长度调制
- P13 · [中文] 11 MOSFET夹断时的沟道电荷与沟道电容计算
- P14 · [中文] 12 速度饱和与短沟道效应:SOI、FinFET、Pillar FET、应变硅
- P15 · [中文] 13 MOSFET亚阈值特性
- P16 · [中文] 14 开尔文发电机、水FET与正反馈
- P17 · [中文] 15 小信号模型:MOS与BJT对比、跨导
- P18 · [中文] 16 小信号模型:输入输出电阻、电容与截止频率
- P19 · [中文] 17 电路与网络理论概览:节点分析与常用定理
- P20 · [中文] 18 集成电路的经济学:良率与定价
- P21 · [中文] 19 放大器基础(上):MOS、BJT与任意三端器件、最大增益
- P22 · [中文] 20 放大器基础(下):MOS、BJT与任意三端器件、最大增益
- P23 · [中文] 21 BJT放大器(上):射极退化、传输特性与增益
- P24 · [中文] 22 BJT放大器(下):射随器、共基、共射共基、有源负载
- P25 · [中文] 23 MOS放大级(上):源极退化、输入输出阻抗
- P26 · [中文] 24 MOS放大级(下):共漏、共栅、级联与提升增益
- P27 · [中文] 25 双管放大级:级联、折叠共源共栅、有源负载、达林顿与电流镜
- P28 · [中文] 26 差分信号与差分对:核心概念与BJT大信号特性
- P29 · [中文] 27 差分放大器(上):MOS、BJT与任意三端器件
- P30 · [中文] 28 差分放大器(下):MOS、BJT与任意三端器件
- P31 · [中文] 29 带有源负载的差分放大器:差分转单端
- P32 · [中文] 30 MOS差分转单端与增益增强
- P33 · [中文] 31 偏置基本概念
- P34 · [中文] 32 集成电路偏置:电流镜与电压裕度
- P35 · [中文] 33 与工艺、电源、温度无关的偏置
- P36 · [中文] 34 带隙基准与可调PVT无关基准
- P37 · [中文] 35 驱动级与输出级:A类与B类
- P38 · [中文] 36 运放设计:基本MOS运放
- P39 · [中文] 37 MOS运放设计实例
- P40 · [中文] 38 BJT运放设计实例
- P41 · [中文] 39 高频特性:传递函数、低通与高通响应
- P42 · [中文] 40 一阶系统的时间常数与传输常数
- P43 · [中文] 41 一阶高频TTC分析:共源与共漏
- P44 · [中文] 42 一阶系统零极点与阶跃响应:下冲与过冲
- P45 · [中文] 43 米勒倍增效应与共源输入阻抗
- P46 · [中文] 44 零值时间常数与传输常数ZVT:b1与a1项计算
- P47 · [中文] 45 用ZVT估算带宽:高频放大器设计实例
- P48 · [中文] 46 ZVT带宽估算何时失效
- P49 · [中文] 47 在ZVT带宽估算中计入零点
- P50 · [中文] 48 零点的产生:并联的串联RC支路
- P51 · [中文] 49 零点的产生:并行信号通路
- P52 · [中文] 50 广义时间常数与传输常数:高阶项
- P53 · [中文] 51 TTC实例:二阶系统、品质因数与自然频率
- P54 · [中文] 52 TTC实例:负阻、振荡器与RLC电路
- P55 · [中文] 53 基本放大级高频特性的TTC分析:CS、CE、CD、CC、CG、CB
- P56 · [中文] 54 非耦合时间常数、独立零极点与可观测动态
- P57 · [中文] 55 低截止频率估算:无穷值时间常数IVT
- P58 · [中文] 56 分立与集成的差异:IVT低截止频率估算实例
- P59 · [中文] 57 宽带放大器:增益带宽积与每级最优增益
- P60 · [中文] 58 反馈:渐近传递函数、一阶分析与快速设计
- P61 · [中文] 59 反馈动态:前向与反馈通路的频率影响、灵敏度降低
- P62 · [中文] 60 反馈对非线性的影响
- P63 · [中文] 61 回归比、渐近增益公式与直接前向传输
- P64 · [中文] 62 有源反馈、双反馈环路与回归比的源依赖性实例
- P65 · [中文] 63 反馈下的端口阻抗:Blackman公式
- P66 · [中文] 64 单边环路增益:电压与电流环路增益
- P67 · [中文] 65 双边环路增益推导
- P68 · [中文] 66 不稳定与条件稳定:电路实例
- P69 · [中文] 67 稳定性判据:Routh-Hurwitz与Nyquist推导
- P70 · [中文] 68 非线性稳定性判据:圆判据与离轴圆判据
- P71 · [中文] 69 相位裕度与增益裕度
- P72 · [中文] 70 反馈放大器补偿:一阶、二阶、三阶系统概览
- P73 · [中文] 71 电路补偿技术:单级与两级运放、米勒补偿
- P74 · [中文] 72 随机变量概览:功率谱密度、自相关与互相关
- P75 · [中文] 73 热噪声:物理机制、频谱、KT/C噪声与可用噪声功率
- P76 · [中文] 74 散粒噪声、爆裂噪声、闪烁噪声与雪崩噪声
- P77 · [中文] 75 PN结二极管、双极型晶体管与MOS管的噪声模型
- P78 · [中文] 76 放大器噪声入门:输出噪声与输入参考噪声
- P79 · [中文] 77 输入参考噪声:二端口噪声模型与共射极
- P80 · [中文] 78 基本放大级噪声:输入参考噪声随频率变化、Friis公式
- P81 · [中文] 79 比较器与失调消除入门
- P82 · [中文] 80 锁存器动态与锁存比较器
- P83 · [中文] 81 数据转换器指标与基本DAC
- P84 · [中文] 82 基本数模转换器架构
- P85 · [中文] 83 基本模数转换器架构
- P86 · [中文] 84 振荡器通用拓扑:大信号Gm、振幅与频率计算
- P87 · [中文] 85 振荡器相位噪声入门
- P88 · [中文] 86 振荡器设计:噪声搬移振荡器实例
- P89 · [中文] 87 锁相环PLL噪声入门
- P90 · [中文] 88 射频功率放大器入门
- P91 · [中文] 89 课程简要总结
- P92 · [中文] 90 电路中的时间常数与传输常数(高频电路分析专题)
- P93 · [中文] 91 反馈电路分析与设计(专题概览)
- P94 · [英文] 02 Basic Solid-State Physics: Doping, Carrier Density, Distribution
- P95 · [英文] 03 Carrier Movement in Semiconductors, Drift and Diffusion
- P96 · [英文] 04 PN Junction, Depletion Region, Diode Equation
- P97 · [英文] 05 PN Junction, Junction Capacitance, Doping Profile
- P98 · [英文] 06 Bipolar Junction Transistor, basic operation, current flow prope
- P99 · [英文] 07 Bipolar transistor: Early effect, Ebers-Moll model, large-signal
- P100 · [英文] 08 MOS Capacitor: Energy band diagram, accumulation, depletion, and
- P101 · [英文] 09 MOSFET Introduction, threshold and body effect, IV characteristi
- P102 · [英文] 10 MOSFET IV Characteristics Derivation, Regions of Operation, Chan
- P103 · [英文] 11 MOSFET Channel charge in pinch-off, Channel capacitance calculat
- P104 · [英文] 12 Velocity saturated MOSFETs, short channel effects, SOI, FinFET,
- P105 · [英文] 13 MOSFET Sub-threshold behavior
- P106 · [英文] 14 Kelvin Generator, water FET, positive feedback.
- P107 · [英文] 15 Small-signal model, MOS vs. BJT, core transistor behavior, trans
- P108 · [英文] 16 Small-signal model, MOS vs. BJT, input and output resistance, ca
- P109 · [英文] 17 Circuit and network theory brief overview, nodal analysis, theor
- P110 · [英文] 18 Economics of Integrated Circuits, Yield, Pricing
- P111 · [英文] 19 (Pt.1) Amplifier Fundamentals, MOS, BJT, and ATD (arbitrary 3-te
- P112 · [英文] 20 (Pt.2) Amplifier Fundamentals, MOS, BJT, and ATD (arbitrary 3-te
- P113 · [英文] 21 (Pt. 1) BJT Amplifier, Emitter Degeneration, Transfer characteri
- P114 · [英文] 22 (Pt. 2) BJT Amplifier, Emitter follower, common-based, cascode,
- P115 · [英文] 23 (Pt. 1) MOS amplifier stages: Source degeneration, input and out
- P116 · [英文] 24 (Pt. 2) MOS amplifier stages: common-drain, common-gate, cascade
- P117 · [英文] 25 Two transistor stages: cascade, folded cascade, active load, Dar
- P118 · [英文] 26 Differential Signaling and differential pair: core concept and l
- P119 · [英文] 27 (Pt. 1) Differential Amplifiers: MOS, BJT, and ATD
- P120 · [英文] 28 (Pt. 2) Differential Amplifiers: MOS, BJT, and ATD
- P121 · [英文] 29 Differential amplifier with active load. Differential-to-single-
- P122 · [英文] 30 MOS Differential-to-Single-Ended Conversion. Gain Enhancement
- P123 · [英文] 31 Basic Biasing Concepts
- P124 · [英文] 32 Integrated circuit biasing, current mirrors, headroom
- P125 · [英文] 33 Process, Supply, and Temperature Independent Biasing
- P126 · [英文] 34 Scaled bandgap reference, adjustable voltage PVT independent ref
- P127 · [英文] 35 Driver stages, output stages, Class A and Class B
- P128 · [英文] 36 Op-Amp Design: Basic MOS Op-Amp
- P129 · [英文] 37 MOS Op-Amp Design Examples
- P130 · [英文] 38 BJT Op-Amp Design Example
- P131 · [英文] 39 High frequency: transfer functions, lower pass and high pass res
- P132 · [英文] 40 Time- and transfer-constants in 1st order system
- P133 · [英文] 41 1st Order high-frequency TTC analysis of common source and commo
- P134 · [英文] 42 Zero/pole in 1st order system, step response, undershoot and ove
- P135 · [英文] 43 Miller multiplication and effect, input impedance of common-sour
- P136 · [英文] 44 Zero-value time and transfer constants (ZVT), b1 and a1 term cal
- P137 · [英文] 45 Bandwidth estimation using ZVT, High-frequency Amplifier design
- P138 · [英文] 46 When ZVT bandwidth estimation fails
- P139 · [英文] 47 Taking zeros into account in ZVT bandwidth estimate
- P140 · [英文] 48 Creation of zeros: series RC branch in parallel
- P141 · [英文] 49 Creation of zeros: parallel signal paths
- P142 · [英文] 50 Generalized Time- and Transfer constants; higher order terms
- P143 · [英文] 51 TTC Examples, 2nd Order System, Quality Factor and Natural Frequ
- P144 · [英文] 52 TTC Examples, negative resistance, oscillator, RLC circuit
- P145 · [英文] 53 High Frequency behavior of basic amplifier stages (CS, CE, CD, C
- P146 · [英文] 54 Uncoupled time-constants, independent poles and zeros, observabl
- P147 · [英文] 55 Low Cut-off Frequency Estimation, Infinite value time-constants
- P148 · [英文] 56 Discrete vs. Integrated Variations, Low Cut-Off Estimation with
- P149 · [英文] 57 Broadband amplifiers, gain-bandwidth product, optimum gain per s
- P150 · [英文] 58 Feedback: Asymptotic Transfer Function, 1st Order Analysis, Rapi
- P151 · [英文] 59 Feedback dynamics, forward and feedback path frequency effect, f
- P152 · [英文] 60 Effect of Feedback on Nonlinearity
- P153 · [英文] 61 Return Ratio, Asymptotic Gain Formula, Direct forward transfer
- P154 · [英文] 62 Active feedback, dual feedback loop, Source dependence of return
- P155 · [英文] 63 Port Impedance under Feedback, Blackman Formula
- P156 · [英文] 64 Unilateral Loop gain, voltage and current loop gains
- P157 · [英文] 65 Bilateral loop gain, derivation, feedback
- P158 · [英文] 66 Instability and conditional stability, circuit examples.
- P159 · [英文] 67 Stability criteria: Routh-Hurwitz, Nyquist derivation
- P160 · [英文] 68 Nonlinear stability criteria: Circle criterion, off-axis circle
- P161 · [英文] 69 Phase margin and gain margin
- P162 · [英文] 70 Feedback amplifier compensation, general view for 1st, 2nd, and
- P163 · [英文] 71 Circuit compensation techniques, one- and two-stage op-amp, Mill
- P164 · [英文] 72 Overview of random variable, PSD, auto- and cross-correlation
- P165 · [英文] 73 Thermal white noise physics, properties, and spectrum, KT/C nois
- P166 · [英文] 74 Shot noise, burst noise, flicker(1/f) noise, avalanche noise
- P167 · [英文] 75 Noise models for pn-junction diode, bipolar transistor, and MOS
- P168 · [英文] 76 Intro. to amplifier noise, output noise, and input-referred nois
- P169 · [英文] 77 Input-referred noise, 2-port noise model, common-emitter
- P170 · [英文] 78 Noise behavior of basic stages, input-referred noise vs. frequen
- P171 · [英文] 79 Intro to comparators and offset cancellation
- P172 · [英文] 80 Latch dynamics, latched comparator
- P173 · [英文] 81 Intro to data converters metrics, basic DAC
- P174 · [英文] 82 Basic digital-to-analog converter architectures
- P175 · [英文] 83 Basic analog-to-digital converter architectures
- P176 · [英文] 84 Oscillator general topology, large signal Gm, amplitude and freq
- P177 · [英文] 85 Phase noise in oscillators (introduction)
- P178 · [英文] 86 Oscillator design, noise shifting oscillator example
- P179 · [英文] 87 Intro. to phase-locked loops (PLL) noise
- P180 · [英文] 88 Intro. to RF power amplifiers
- P181 · [英文] 89 Brief course summary
- P182 · [英文] 90 Time and Transfer Constants in Circuits (High Frequency Circuit
- P183 · [英文] 91 Feedback Circuit Analysis and Design (Overview)
Description
加州理工 Ali Hajimiri 教授的模拟电路设计完整课程,共 91 讲约 68 小时,原片合计播放 217 万+。 📌 本期看点 · 器件基础:能带、掺杂、PN 结、BJT 与 MOSFET · 放大器:单级与多级放大、共源共栅、电流镜、偏置设计 · 频率响应:TTC 方法、零极点、宽带放大器与增益带宽积 · 反馈:环路增益、双边反馈、稳定性与频率补偿 · 噪声与数据转换:热噪声、噪声分析、DAC 与 ADC 基础 🧭 观看指南 共 91 讲。P1 中文配音,P2 第一讲英文原声(完整英文原声在后半部),P3 双语怎么切,随后其余中文配音,最后其余英文原声。 🎯 适合人群 电子信息、微电子专业学生,模拟 IC 方向的工程师,以及想系统学模拟电路设计的同学。 持续更新海外硬核课程,点赞收藏关注三连,你的支持是更新的最大动力。